ABB | 3BHL000390P0104 5SHX1960L0004 | IGCT MODULE

Product Description:

IGCT technology applies two levels of integration: monolithic on the wafer and hybrid for the periphery of the GCT.
In many cases, the anti-parallel diodes can be integrated monolithically . This eliminates the diode stack and associated heavy current connections.
Integration of this kind only becomes impractical at the highest currents and the GCT and the diode have to remain separate. Hybrid integration achieves a closer blending of GCT, drive unit and cooler . The synergies of the mechanical construction produce advantages with respect to reduced size, greater stability and lower cost. The hard unambiguous drive achieves an overall even, smoother operation. Every segment of the wafer, of which a 3 kA unit has more than 2000, ”knows” when it has to switch and executes the corresponding command independently of the others. Since all the segments respond exactly the same, optimum parallel operation is achieved and the switching capacity varies in proportion to wafer area. It is therefore relatively simple to develop an appropriately graded family of GCT devices.

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